|
| Substrate material |
| Al2O3 ,99.6% Hi-Rel + Hybrid grade |
Dimension:
4.5" x 3.75" |
Thickness: 10 - 50 mil |
| AlN |
Dimension:
4.5" x 3.75" |
Thickness: 25 - 40 mil |
| Metallization by sputtering |
|
NiCr-Ni-Au
|
Depends on R sheet |
-
Thickness NiCr
-
Thickness Ni : 1700
-
Thickness Au : 600 
|
Optional |
|
| Electroplating |
| Au (purity 99,99% hardness 90 max VHN20) |
Standard |
Thickness: 3 - 5 µm |
| Other thicknesses |
Thickness: 25 - 40 mil |
Gold deposit meets the requirements of the relevant specification for bonding, soldering and purity. (MIL 883C, MIL 202F, MIL-G-45204C)
| Conductors |
| Metallization lay up |
Standard |
NiCr-Ni-Au-Aul |
| Optional |
NiCr-Ni-Au-Au-Ni-Au |
| Line width |
Standard |
Min. 50 ± 6 µm |
| Special |
Min. 25 ± 4 µm |
| Gap width |
Standard |
Min. 50± 6 µm |
| Special |
Min. 25 ± 4 µm |
| Distance to resistor pattern |
Min. 150 µm |
| Distance to substrate edge |
Scribing |
Min. 200µm |
| Dicing |
Min. 100µm |
| Laser cutting |
Min. 350µm |
| Distance to vias |
Min. 300µm |
| Resistors |
| Sheet resistivity |
Standard |
50, 100,200  |
| Optional |
25 |
| Line width |
Not trimmable |
Min. 100µm |
| RF-trimmable |
Min. 150µm |
| Trimmable |
Min. 250µm |
| Line width tolerance |
± 2.5 µm |
| Gap width Min. |
100µm |
| TCR |
Typical |
+ 100 ± 25 ppm/°C |
| TCR tracking |
Typical |
 10 ppm/°C |
| Distance to substrate edge |
Min. 200µm |
| Probe pads |
Min. 300*300 µm2 |
| Power dissipation |
Rsq 50 |
Max. 180 mW/mm2 |
| Rsq 100 |
Max. 120 mW/mm2 |
| Rsq 200 |
Max. 80 mW/mm2 |
| Conductor overlap |
Min. 50 µm |
| Distance to vias |
Min. 150 µm |
| Metallized vias |
| Hole diameter |
Min. 300 µm |
| Distance to substrate edge |
Min. 1000 µm |
| Distance between vias |
Min. 200 µm |
| Distance to resistor |
Min.150 µm |
| Vias / inch2 substrate |
Via 300 µm |
Max. 18 |
| Land dimension for via |
Diameter via + 300µm |
| Alignment accuracy |
± 50 µm |
|